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| BB 831 Silicon Variable Capacitance Diode Preliminary data * Frequency range up to 2 GHz special design for use in TV-sat indoor units Type BB 831 Marking white T Ordering Code Q62702-B592 Pin Configuration 1=C 2=A Package SOD-323 Maximum Ratings Parameter Diode reverse voltage Peak reverse voltage (R 5k ) Forward current Operating temperature range Storage temperature Symbol VR VRM IF Top Tstg Value 30 35 20 -55 ...+125 -55 ...+150 mA C Unit V Semiconductor Group 1 Aug-03-1998 BB 831 Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter DC characteristics Reverse current VR = 30 V Reverse current VR = 30 V, TA = 85 C IR 500 IR 20 nA Symbol min. Values typ. max. Unit AC characteristics Diode capacitance VR = 1 V, f = 1 MHz VR = 28 V, f = 1 MHz Capacitance ratio VR = 1 V, VR = 28 V, f = 1 MHz Capacitance matching VR = 1 V, VR = 28 V, f = 1 MHz Series resistance VR = 1 V, f = 100 MHz Series inductance Ls 1.8 nH rs 1 CT1 /CT28 CT /CT CT 7.8 0.85 7.8 8.8 1.02 8.6 9.8 1.2 9.5 3 % pF 1) In-line matching. For details please refer to Application Note 047 Semiconductor Group 2 Aug-03-1998 BB 831 Diode capacitance CT = f (VR ) f = 1MHz Semiconductor Group 3 Aug-03-1998 |
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